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CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C304N3 Issued Date : 2005.01.10 Revised Date : Page No. : 1/4
BTD1768N3
Description
The BTD1768N3 is designed for use in driver and output stages of AF amplifier and general purpose application.
Features
* Low collector saturation voltage * High breakdown voltage, VCEO=80V (min.) * High collector current, IC(max)=1A (DC)
Symbol
BTD1768N3
Outline
SOT-23
BBase CCollector EEmitter
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature
Note : Pulse test, PW 10ms, Duty 50%.
Symbol VCBO VCEO VEBO IC ICP PD RJA Tj Tstg
Limits 100 80 5 1 2 (Note) 225 556 150 -55~+150
Unit V V V A A mW C/W C C
BTD1768N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(SAT) *hFE fT Cob Min. 100 80 5 120 Typ. 0.15 100 20 Max. 1 1 0.4 560 Unit V V V A A V MHz pF
Spec. No. : C304N3 Issued Date : 2005.01.10 Revised Date : Page No. : 2/4
Test Conditions IC=50A IC=1mA IE=50A VCB=80V, IE=0 VEB=4V, IC=0 IC=500mA, IB=20mA VCE=3V, IC=100mA VCE=10V, IC=50mA, f=100MHz VCB=10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width 380s, Duty Cycle2%
Classification Of hFE
Rank Range Q 120~270 R 180~390 S 270~560
BTD1768N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
HFE@VCE=3V
Spec. No. : C304N3 Issued Date : 2005.01.10 Revised Date : Page No. : 3/4
Saturation Voltage vs Collector Current
1000 Saturation Voltage---(mV)
Current Gain---HFE
VBESAT@IC=20IB
100
HFE@VCE=2V
100
VCESAT@IC=20IB
10 1 10 100 1000 Collector Current---IC(mA)
10 1 10 100 1000 Collector Current---IC(mA)
On Voltage vs Collector Current
1000
Power Dissipation---PD(mW) 250 200 150 100 50 0
Power Derating Curve
On Voltage---(mV)
VBE(on)@VCE=2V
100 1 10 100 1000 Collector Current---IC(mA)
0
50
100
150
200
Ambient Temperature---TA()
BTD1768N3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
A L 3 B 1 2 S
Spec. No. : C304N3 Issued Date : 2005.01.10 Revised Date : Page No. : 4/4
Marking:
AJ
V
G
C D K
3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector
H J
*: Typical
DIM A B C D G H
Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040
Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10
DIM J K L S V
Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256
Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD1768N3
CYStek Product Specification

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